document number: 89144 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 27-sep-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 high-voltage trench mos barrier schottky rectifier VSB3200 vishay general semiconductor new product features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder dip 275 c max. 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applications for use in high frequency rect ifier of switching mode power supplies, freewheeling diod es, dc-to-dc converters or polarity protection application. mechanical data case: do-201ad molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-fr ee and rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes the cathode end note (1) units mounted on pcb with 2 mm x 2 mm copper pa d areas 0.375" (9.5 mm) lead length, free air primary characteristics i f(av) 3.0 a v rrm 200 v i fsm 90 a v f at i f = 3.0 a 0.63 v t j max. 150 c do-201ad tmbs ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol VSB3200 unit maximum repetitive pe ak reverse voltage v rrm 200 v maximum average forward rectified current (fig. 1) (1) i f(av) 3.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 90 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 40 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89144 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 27-sep-10 VSB3200 vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms note (1) units mounted on pcb with 2 mm x 2 mm copper pa d areas 0.375" (9.5 mm) lead length, free air ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit breakdown voltage i r = 1.0 ma t a = 25 c v br 200 (minimum) - v instantaneous forward voltage (1) i f = 3.0 a t a = 25 c v f 0.86 1.20 t a = 125 c 0.63 0.71 reverse current per diode (2) v r = 200 v t a = 25 c i r 1.6 60 a t a = 125 c 1.2 9 ma typical juntion capacitance 4.0 v, 1 mhz c j 175 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol VSB3200 unit typical thermal resistance (1) r ja 62 c/w r jl 9 ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode VSB3200-m3/54 1.08 54 1400 13" di ameter paper tape and reel VSB3200-m3/73 1.08 73 1000 ammo pack packaging 0 0 50 75 25 100 125 150 175 3.5 average forward rectified current (a) lead temperature (c) 3.0 2.5 2.0 1.5 0.5 1.0 resistive or inductive load 0.375" (9.5 mm) lead length 0 2.4 03.5 average forward current (a) average power loss (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 2.0 1.6 1.2 0.8 0.4 3.0 2.5 2.0 1.5 0.5 d = t p /t t p t 1.0
document number: 89144 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 27-sep-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 VSB3200 vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 10 0.01 0 0.4 0.2 0.8 0.6 1.2 1.0 t a = 150 c t a = 125 c t a = 25 c instantaneous forward voltage (v) instantaneous forward current (a) 1 0.1 t a = 100 c instantaneous reverse current (ma) 10 30 20 100 40 60 80 percent of rated peak reverse voltage (%) 50 70 90 1 0.1 0.01 0.001 0.0001 t a = 100 c t a = 125 c t a = 150 c t a = 25 c junction capacitance (pf) 10 1 100 100 1000 10 0.1 reverse voltage (v) t j = 25 c f = 1.0 mhz v sig = 50 mv p-p 0.01 10 1 100 100 1 0.1 10 t - pulse duration (s) transient thermal impedance (c/w) junction to lead do-201ad 0.210 (5.3) 0.190 (4.8) dia. 0.052 (1.32) 0.048 (1.22) dia. 1.0 (25.4) min. 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2)
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